The automatic detection of surface-level irregularities—defects or anomalies—in 3D data is of significant interest for various real-world purposes, such as industrial quality inspection, ...

During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...

As device sizes continue to increase on devices at 2x nm design rule and beyond and high wafer stress is worsening due to multi-film stacking in the vertical memory process, we observe an increasing ...